Buch: AlGaN/GaN-based millimeter-wave high electron mobility transistors
AlGaN/GaN-based millimeter-wave high electron mobility transistors
Science for systems, Band 3
Christian Haupt
Hrsg.: Oliver Ambacher; Fraunhofer IAF, Freiburg
2011, 197 S., num. mostly col. illus., Softcover
Sprache: Englisch
Fraunhofer Verlag
ISBN 978-3-8396-0303-1

kostenloser Download als PDF-Datei

Inhalt
In this work a scaling approach is studied to develop a transistor technology which achieves a high gain as well as a high output power at W-band frequencies and can be applied in the existing fabrication process for MMICs. Following the theoretical scaling rules for field effect transistors lateral and vertical critical dimensions of 100 nm and 10 nm must be achieved, respectively. Therefore various new fabrication processes were developed to enable the new critical dimensions with a sufficient production yield for MMIC fabrication.
Transistors fabricated with these methods were evaluated regarding the influence of the scaled geometries on the device characteristics using S-parameter as well as DC-measurements. As a result a transistor technology could be established with a transconductance above 600 mS/mm which is one of the highest reported values for GaN-based HEMTs so far. Furthermore, these transistors feature a very low parasitic capacitance of 0.3 pF/mm and can as a consequence achieve a current-gain cut-off frequency of more than 110 GHz.
Besides the high frequency characteristics short channel effects and their influence on the device characteristics were also evaluated. The scaled transistors are dominated by a drain induced barrier lowering (DIBL) and a critical aspect ratio of approximately 14 is necessary to suppress the DIBL-effect in GaN-HEMTs.

Verfügbare Formate

Softcover
EUR 49.00 (* inkl. MwSt.)
Sofort lieferbar

Publikationslisten zum Thema:
Fraunhofer IAF, Angewandte Forschung, applied research,

 

* Alle Preise verstehen sich inkl. der gesetzlichen MwSt. Lieferung deutschlandweit und nach Österreich versandkostenfrei. Informationen über die Versandkosten ins Ausland finden Sie hier.