Buch: Aluminum Oxide for the Surface Passivation of High Efficiency Silicon Solar Cells
Aluminum Oxide for the Surface Passivation of High Efficiency Silicon Solar Cells
Technology and Advanced Characterization
Armin Richter
Hrsg.: Fraunhofer ISE, Freiburg/Brsg.
2015, 244 S., num., mostly col. illus. and tab., Softcover
Sprache: Englisch
Konstanz, Univ., Diss., 2014
Fraunhofer Verlag
ISBN 978-3-8396-0847-0

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Thin layers of aluminum oxide (Al2O3) are highly relevant for various high-efficiency silicon solar cell designs, as Al2O3 can provide an excellent passivation of crystalline silicon surfaces. One main part of this thesis deals with the evaluation, optimization and in-depth analysis of such passivating Al2O3 layers deposited by atomic layer deposition. In particular the results regarding the properties of the c Si/Al2O3 interface allowed to identify the underlying passivation mechanisms for various process variations.
Another part of the thesis deals with the realization of p+nn+ silicon solar cells through the application and evaluation of industrially feasible technologies, i.e. for the front side boron-doped p+ emitter (based on the Al2O3 surface passivation), as well as for the diffusion and passivation of the rear side n+ back surface field.
The excellent silicon surface passivation obtained in this thesis allowed in addition the experimental investigation of the Auger recombination in high-purity crystalline silicon with an improved precision, based on which results a new parameterization of the Auger recombination was developed. This parameterization was used to reassess the intrinsic efficiency limit of crystalline silicon solar cells.

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