Buch: Charge carrier dynamics in InGaN quantum wells: Stimulated emission depletion and lateral charge carrier motion
Charge carrier dynamics in InGaN quantum wells: Stimulated emission depletion and lateral charge carrier motion
Science for systems, Band 27
Hans-Michael Solowan
Hrsg.: Oliver Ambacher; Fraunhofer IAF
2017, 138 S., num., mostly col. illus. and tab., Softcover
Sprache: Englisch
Fraunhofer Verlag
ISBN 978-3-8396-1068-8

kostenloser Download als PDF-Datei

Inhalt
The focus of this work is the investigation of stimulated emission depletion (STED) and lateral charge carrier motion within InGaN/GaN quantum wells of Indium Gallium Nitride (InGaN) based LEDs.
In the first part, the properties of the STED effect in blue InGaN quantum wells are studied and compared to those of dye systems usually used in STED microscopy. Continuous wave and pulsed measurements are discussed and furthermore analyzed with an extended rate equation system based on the one typically used for fluorescence dyes.
A confocal time of flight method is used in the second part to investigate lateral charge carrier motion in blue and turquoise InGaN quantum wells for various charge carrier densities and in the temperature range between 4 K and room temperature. The measurements are analyzed using a 2D version of the ABC model, which includes drift and diffusion of charge carriers within the quantum well plane.

Verfügbare Formate

Softcover
EUR 49.00 (* inkl. MwSt.)
Sofort lieferbar

 

* Alle Preise verstehen sich inkl. der gesetzlichen MwSt. Lieferung deutschlandweit und nach Österreich versandkostenfrei. Informationen über die Versandkosten ins Ausland finden Sie hier.