Maciej Cwiklinski
Design of Millimeter-Wave Power Amplifiers in Gallium Nitride High-Electron-Mobility Transistor Technology
Science for Systems, Band 59
Hrsg.: Fraunhofer IAF, Freiburg
2022, 208  S., num., mostly col. illus. and tab., Softcover
Fraunhofer Verlag

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Markus Weiß
Realization of Radio Frequency Digital-to-Analog Converters in Gallium Nitride Technology for 5G Mobile Communication
Science for Systems, Band 60
Hrsg.: Fraunhofer IAF, Freiburg
2022, 176  S., num., mostly col. illus. and tab., Softcover
Fraunhofer Verlag

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Philipp Neininger
Power Combining Solutions for High-Power GaN MMICs at mm-Wave Frequencies
Science for Systems, Band 55
Hrsg.: Fraunhofer IAF, Freiburg
2021, 165  S., num., mostly col. illus. and tab., Softcover
Fraunhofer Verlag

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Laurenz John
Integrated Sub-Millimeter-Wave High-Power Amplifiers in Advanced InGaAs-Channel HEMT Technology
Science for Systems, Band 53
Hrsg.: Oliver Ambacher; Fraunhofer IAF, Freiburg
2021, 160  S., num., mostly col. illus. and tab., Softcover
Fraunhofer Verlag

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Ana Belén Amado Rey
Analysis, design and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology
Science for Systems, Band 39
Hrsg.: Oliver Ambacher; Fraunhofer IAF, Freiburg
2018, 184  S., num., mostly col. illus. and tab., Softcover
Fraunhofer Verlag

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Markus Mußer
Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier
Science for Systems, Band 25
Hrsg.: Oliver Ambacher; Fraunhofer IAF, Freiburg
2016, 150  S., Softcover
Fraunhofer Verlag

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Dirk Schwantuschke
Modeling of Dispersive Millimeter-Wave GaN HEMT Devices for High Power Amplifier Design
Science for Systems, Band 23
Hrsg.: Oliver Ambacher; Fraunhofer IAF, Freiburg
2016, ca. 200  S., num., mostly col. illus. and tab., Softcover
Fraunhofer Verlag

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Stephan Maroldt
Gallium Nitride Based Transistors for High-Efficiency Microwave Switch-Mode Amplifiers
Science for Systems, Band 9
Hrsg.: Oliver Ambacher; Fraunhofer IAF, Freiburg
2012, 200  S., num. mostly col. illus., Softcover
Fraunhofer Verlag

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